MIL-PRF-19500/116L

8 June 2001

SUPERSEDING

MIL-PRF-19500/116K

28 February 1997

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING

TYPES 1N914, 1N914UR, 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA,

1N4148UBCC, 1N4148UBCD, 1N4531, AND 1N4531UR, JAN, JANTX, JANTXV, JANHC, AND JANKC

JANS1N4148-1 (see 6.4). Device types 1N914

and 1N4531 are inactive for new design.

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three

levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product

assurance are provided for each unencapsulated device.

1.2 Physical dimensions. See figures 1 (similar to DO-35), 2, 3, 4, and 5.

1.3 Maximum ratings.

Type

1/120 s

V dc

V (pk)

mA

A (pk)

qC

qC

qC/W

qC/W

qC/W

1N914, UR

100

75

75 (1)

1

-65 to +200

-65 to +175

70

N/A

1N4531, UR

100

75

125 (2)

1

-65 to +200

-65 to +175

70

250

N/A

1N4148-1, UR-1

100

75

200 (3)

2

-65 to +200

-65 to +200

70

(leaded)

N/A

1N4148UB,

1N4148UB2,

1N4148UB2R,

1N4148UBCA,

1N4148UBCC

,

1N4148UBCD,

100

75

200 (3)

2

-65 to +200

-65 to +200

70

100(UR)

150

(1) Derate at 0.5 mA/

(2) Derate at 0.83 mA/

(3) Derate at 1.14 mA/

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

INCH POUND

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 8 September 2001.