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MTB10N40E Fiches technique(PDF) 3 Page - ON Semiconductor |
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MTB10N40E Fiches technique(HTML) 3 Page - ON Semiconductor |
3 / 11 page MTB10N40E http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 μAdc) Temperature Coefficient (Positive) V(BR)DSS 400 — — 398 — — Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 400 Vdc, VGS = 0 Vdc) (VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS — — — — 0.1 1.0 μAdc Gate−Body Leakage Current−Forward (Vgsf = 20 Vdc, VDS = 0) IGSSF — — 100 nAdc Gate−Body Leakage Current−Reverse (Vgsr = 20 Vdc, VDS = 0) IGSSR — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 μAdc) Temperature Coefficient (Negative) VGS(th) 2.0 — 2.8 6.3 4.0 — Vdc mV/°C Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 5.0 Adc) RDS(on) — 0.4 0.55 Ohm Drain−Source On−Voltage (VGS = 10 Vdc) (ID = 10 Adc) (ID = 5.0 Adc, TJ = 125°C) VDS(on) — — 5.61 — 6.6 5.5 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) gFS 4.0 — — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss — 1570 2200 pF Output Capacitance Coss — 230 325 Reverse Transfer Capacitance Crss — 55 110 SWITCHING CHARACTERISTICS (2) Turn−On Delay Time (VDD = 200 Vdc, ID = 10 Adc, VGS = 10 Vdc, RG = 10 Ω) td(on) — 25 50 ns Rise Time tr — 37 75 Turn−Off Delay Time td(off) — 75 150 Fall Time tf — 31 65 Gate Charge (See Figure 8) (VDS = 320 Vdc, ID = 10 Adc, VGS = 10 Vdc) QT — 46 63 nC Q1 — 10 — Q2 — 23 — Q3 — — — SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (1) (IS = 10 Adc, VGS = 0 Vdc) (IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C) VSD — — 0.9 — 2.0 — Vdc Reverse Recovery Time (See Figure 14) (IS = 10 Adc, VGS = 0 Vdc, dIS/dt = 100 A/μs) trr — 250 — ns Reverse Recovery Stored Charge QRR — 3000 — nC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the tab to center of die) (Measured from the drain lead 0.25″ from package to center of die) LD — — 3.5 4.5 — — nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS — 7.5 — nH (1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. |
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Description similaire - MTB10N40E |
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