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MTB10N40E Fiches technique(PDF) 3 Page - ON Semiconductor

No de pièce MTB10N40E
Description  High Energy Power FET
Download  11 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MTB10N40E Fiches technique(HTML) 3 Page - ON Semiconductor

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MTB10N40E
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
400
398
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
0.1
1.0
μAdc
Gate−Body Leakage Current−Forward
(Vgsf = 20 Vdc, VDS = 0)
IGSSF
100
nAdc
Gate−Body Leakage Current−Reverse
(Vgsr = 20 Vdc, VDS = 0)
IGSSR
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
2.8
6.3
4.0
Vdc
mV/°C
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 5.0 Adc)
RDS(on)
0.4
0.55
Ohm
Drain−Source On−Voltage (VGS = 10 Vdc)
(ID = 10 Adc)
(ID = 5.0 Adc, TJ = 125°C)
VDS(on)
5.61
6.6
5.5
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc)
gFS
4.0
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
1570
2200
pF
Output Capacitance
Coss
230
325
Reverse Transfer Capacitance
Crss
55
110
SWITCHING CHARACTERISTICS (2)
Turn−On Delay Time
(VDD = 200 Vdc, ID = 10 Adc,
VGS = 10 Vdc,
RG = 10 Ω)
td(on)
25
50
ns
Rise Time
tr
37
75
Turn−Off Delay Time
td(off)
75
150
Fall Time
tf
31
65
Gate Charge
(See Figure 8)
(VDS = 320 Vdc, ID = 10 Adc,
VGS = 10 Vdc)
QT
46
63
nC
Q1
10
Q2
23
Q3
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (1)
(IS = 10 Adc, VGS = 0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.9
2.0
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 10 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
250
ns
Reverse Recovery Stored Charge
QRR
3000
nC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.


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