LMZ31704

SLVSBV8A – JUNE 2013 – REVISED AUGUST 2013

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ELECTRICAL CHARACTERISTICS (continued)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Synchronization frequency

200

1200

kHz

CLK High-Level

2.0

5.5

V

CLK Control

CLK Low-Level

0.5

V

CLK Duty Cycle

20

50

80

%

Thermal shutdown

175

°C

Thermal Shutdown

Thermal shutdown hysteresis

10

°C

Ceramic

External input capacitance

µF

Non-ceramic

Ceramic

200

1500

µF

External output capacitance

Non-ceramic

Equivalent series resistance (ESR)

35

m

Ω

(6)

A minimum of 44 µF of external ceramic capacitance is required across the input (VIN and PVIN connected) for proper operation. An

additional 100 µF of bulk capacitance is recommended. It is also recommended to place a 0.1 µF ceramic capacitor directly across the

PVIN and PGND pins of the device. Locate the input capacitance close to the device. When operating with split VIN and PVIN rails,

place 4.7µF of ceramic capacitance directly at the VIN pin. See Table 6 for more details.

(7)

The amount of required output capacitance varies depending on the output voltage (see Table 5 ). The amount of required capacitance

must include at least 1x 47µF ceramic capacitor. Locate the capacitance close to the device. Adding additional capacitance close to the

load improves the response of the regulator to load transients. See Table 5 and Table 6 more details.

(8)

When using both ceramic and non-ceramic output capacitors, the combined maximum must not exceed 5000 µF. It may be necessary to

increase the slow start time when turning on into the maximum capacitance. See the Slow Start (SS/TR) section for information on

adjusting the slow start time.

THERMAL INFORMATION

LMZ31704

RVQ42

UNIT

42 PINS

13.3

1.6

°C/W

5.3

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, literature

number SPRA953.

(2)

The junction-to-ambient thermal resistance,

2 oz. copper and natural convection cooling. Additional airflow reduces

(3)

The junction-to-top characterization parameter,

the temperature of the top of the device.

(4)

The junction-to-board characterization parameter,

the temperature of the board 1mm from the device.

4

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