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SIZ730DT Fiches technique(PDF) 3 Page - Vishay Telefunken

No de pièce SIZ730DT
Description  N-Channel 30 V (D-S) MOSFETs
Download  14 Pages
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Fabricant  TFUNK [Vishay Telefunken]
Site Internet  http://www.vishay.com
Logo TFUNK - Vishay Telefunken

SIZ730DT Fiches technique(HTML) 3 Page - Vishay Telefunken

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Document Number: 67648
S11-2380-Rev. B, 28-Nov-11
www.vishay.com
3
Vishay Siliconix
SiZ730DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
 300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Dynamica
Turn-On Delay Time
td(on)
Channel-1
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Ch-1
10
20
ns
Ch-2
20
40
Rise Time
tr
Ch-1
15
30
Ch-2
18
35
Turn-Off Delay Time
td(off)
Ch-1
15
30
Ch-2
30
60
Fall Time
tf
Ch-1
7
15
Ch-2
10
20
Turn-On Delay Time
td(on)
Channel-1
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
Ch-1
5
10
Ch-2
10
20
Rise Time
tr
Ch-1
15
30
Ch-2
15
30
Turn-Off Delay Time
td(off)
Ch-1
17
35
Ch-2
30
60
Fall Time
tf
Ch-1
7
15
Ch-2
10
20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Ch-1
16
A
Ch-2
35
Pulse Diode Forward Currenta
ISM
Ch-1
70
Ch-2
100
Body Diode Voltage
VSD
IS = 10 A, VGS = 0 V
Ch-1
0.8
1.2
V
IS = 10 A, VGS = 0 V
Ch-2
0.78
1.2
Body Diode Reverse Recovery Time
trr
Channel-1
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Channel-2
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Ch-1
15
30
ns
Ch-2
25
50
Body Diode Reverse Recovery Charge
Qrr
Ch-1
6
12
nC
Ch-2
15
32
Reverse Recovery Fall Time
ta
Ch-1
9
ns
Ch-2
13
Reverse Recovery Rise Time
tb
Ch-1
6
Ch-2
12


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