SI7102DN datasheet(1/14 Pages) TFUNK

No de pièce	SI7102DN

Description	N-Channel 12-V (D-S) MOSFET

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Fabricant	TFUNK [Vishay Telefunken]

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Vishay Siliconix

Si7102DN

Document Number: 74250

S-83044-Rev. B, 22-Dec-08

www.vishay.com

1

N-Channel 12-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

• TrenchFET® Power MOSFET

•

Low Thermal Resistance PowerPAK®

Package with Small Size and Low 1.07 mm

Profile

•

100 % Rg Tested

APPLICATIONS

•

Secondary Synchronous Rectification

•

Point-of-Load

•

Load Switch

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

e

Qg (Typ.)

12

0.0038 at VGS = 4.5 V

35

41 nC

0.0047 at VGS = 2.5 V

35

1

2

3

4

5

6

7

8

S

G

D

3.30 mm

PowerPAK 1212-8

Bottom View

Ordering Information: Si7102DN-T1-E3 (Lead (Pb)-free)

Si7102DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Package limited.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

12

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

35e

A

TC = 70 °C

35e

TA = 25 °C

25a, b

TA = 70 °C

17.8a, b

Pulsed Drain Current

IDM

60

Continuous Source-Drain Diode Current

TC = 25 °C

IS

35e

TA = 25 °C

3.2a, b

Maximum Power Dissipation

TC = 25 °C

PD

52

W

TC = 70 °C

33

TA = 25 °C

3.8a, b

TA = 70 °C

2.4a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 50 to 150

°C

Soldering Recommendations (Peak Temperature)c, d

260

Numéro de pièce similaire - SI7102DN

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI7102DN	581Kb / 14P	N-Channel 12-V (D-S) MOSFET Rev. B, 22-Dec-08
	SI7102DN	578Kb / 14P	N-Channel 12-V (D-S) MOSFETs 01-Jan-2022
	SI7102DN-T1-E3	581Kb / 14P	N-Channel 12-V (D-S) MOSFET Rev. B, 22-Dec-08
	SI7102DN-T1-GE3	581Kb / 14P	N-Channel 12-V (D-S) MOSFET Rev. B, 22-Dec-08
	SI7102DN	578Kb / 14P	N-Channel 12-V (D-S) MOSFETs 01-Jan-2022

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Description similaire - SI7102DN

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI7104DN	542Kb / 14P	N-Channel 12-V (D-S) MOSFET Rev. B, 17-Mar-08
	SI7858BDP	515Kb / 13P	N-Channel 12 V (D-S) MOSFET Rev. A, 03-May-10
	SIR492DP	482Kb / 14P	N-Channel 12-V (D-S) MOSFET Rev. B, 22-Sep-08
	SI7102DN	581Kb / 14P	N-Channel 12-V (D-S) MOSFET Rev. B, 22-Dec-08
Vishay Telefunken	SIS452DN	568Kb / 13P	N-Channel 12-V (D-S) MOSFET
Vishay Siliconix	SI4838BDY	919Kb / 9P	N-Channel 12 V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI7104DN	541Kb / 14P	N-Channel 12-V (D-S) MOSFET 01-Jan-2022
Vishay Telefunken	SIB404DK	195Kb / 9P	N-Channel 12 V (D-S) MOSFET
Vishay Siliconix	SIUD412ED	185Kb / 7P	N-Channel 12 V (D-S) MOSFET Rev. A, 08-Aug-16
	SI7858ADP	318Kb / 12P	N-Channel 12-V (D-S) MOSFET Rev. C, 03-Mar-08
	SI7858BDP	349Kb / 13P	N-Channel 12 V (D-S) MOSFET Rev. A, 03-May-10

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