Moteur de recherche de fiches techniques de composants électroniques |
|
SI1922ED Fiches technique(PDF) 3 Page - Vishay Telefunken |
|
SI1922ED Fiches technique(HTML) 3 Page - Vishay Telefunken |
3 / 12 page Document Number: 67192 S11-2307-Rev. B, 21-Nov-11 www.vishay.com 3 Vishay Siliconix Si1922EDH This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Gate Current vs. Gate-to-Source Voltage Output Characteristics On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 0 0.1 0.2 0.3 0.4 0.5 0369 12 15 T J = 25 °C 0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 VGS =5Vthru2V VGS =1.5 V VGS =1V V DS - Drain-to-Source Voltage (V) 0.13 0.16 0.19 0.22 0.25 012 3 4 VGS =1.8 V VGS =2.5 V VGS =4.5 V I D - Drain Current (A) Gate Current vs. Gate-to-Source Voltage Transfer Characteristics Gate Charge 10-10 10-9 10-8 10-7 10-6 10-5 10-4 10-3 0369 12 15 VGS - Gate-to-Source Voltage (V) T J = 150 °C T J = 25 °C 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.3 0.6 0.9 1.2 1.5 TC = 125 °C TC = 25 °C TC = - 55 °C V GS - Gate-to-Source Voltage (V) 0 2 4 6 8 0.0 0.5 1.0 1.5 2.0 ID =1.5 A VDS =10V VDS =16V VDS =5V Q g - Total Gate Charge (nC) |
Numéro de pièce similaire - SI1922ED |
|
Description similaire - SI1922ED |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |