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SI1034CX Fiches technique(PDF) 1 Page - Vishay Telefunken |
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SI1034CX Fiches technique(HTML) 1 Page - Vishay Telefunken |
1 / 8 page Vishay Siliconix Si1034CX Document Number: 67468 S13-1614-Rev. C, 29-Jul-13 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical support, please contact: pmostechsupport@vishay.com Dual N-Channel 20 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET •100 % Rg Tested • Gate-Source ESD Protected: 1000 V • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load/Power Switching for Portable Devices • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) Qg (Typ.) 20 0.396 at VGS = 4.5 V 0.5 0.75 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V 0.05 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 0.61a, b A TA = 70 °C 0.49a, b Pulsed Drain Current IDM 2 Continuous Source-Drain Diode Current TA = 25 °C IS 0.18a, b A Maximum Power Dissipationa TA = 25 °C PD 0.22a, b W TA = 70 °C 0.14a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambientb t 5 s RthJA 470 565 °C/W Steady State 560 675 Ordering Information: Si1034CX-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code 4 XX Lot Traceability and Date Code Part # Code Top View 3 1 D2 G2 S1 5 2 4 6D1 S2 G1 SC-89 |
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