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1N50A Fiches technique(PDF) 2 Page - Unisonic Technologies |
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1N50A Fiches technique(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 1N50A Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R205-030.a ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous (TC=25°C) ID 1 (Note 2) A Pulsed (Note 3) IDM 4 (Note 2) A Avalanche Energy Single Pulsed (Note 4) EAS 40 mJ Power Dissipation PD 25 W Derate above 25°C 0.2 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L = 80mH, IAS = 1A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C 5. ISD ≤ 1.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 110 °C/W Junction to Case θJC 5 °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 500 V Drain-Source Leakage Current IDSS VDS=500V, VGS=0V 1 µA Gate- Source Leakage Current Forward IGSS VGS=+30V, VDS=0V +100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 3.0 5.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.5A 6.8 8.0 Ω DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 125 290 pF Output Capacitance COSS 17 35 pF Reverse Transfer Capacitance CRSS 15 20 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, RG=25Ω (Note 1, 2) 32 40 ns Rise Time tR 17 35 ns Turn-OFF Delay Time tD(OFF) 54 70 ns Fall-Time tF 18 32 ns Total Gate Charge QG VGS=10V, VDS=50V, ID=1.3A (Note 1, 2) 9 15 nC Gate to Source Charge QGS 3 nC Gate to Drain Charge QGD 0.8 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 1 A Maximum Body-Diode Pulsed Current ISM 4 A Drain-Source Diode Forward Voltage VSD IS=1A, VGS=0V 1.15 V Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
Numéro de pièce similaire - 1N50A |
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Description similaire - 1N50A |
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