UF520_15 datasheet(2/6 Pages) UTC

No de pièce	UF520

Description	N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

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Fabricant	UTC [Unisonic Technologies]

Site Internet	http://www.utc-ic.com

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UF520

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-659.a

ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

TC=25°C

9.2

A

Continuous

TC=100°C

ID

6.5

A

Drain Current

Pulsed (Note 2)

IDM

37

A

Single Pulsed Avalanche Energy (Note 3)

EAS

36

mJ

Power Dissipation

PD

50

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55~+175

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve

3. VDD=25V, starting TJ=25°C, L=640mH, RG=25Ω, peak IAS=9.2A

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

80

°C/W

Junction to Case

θJC

2.5

°C/W

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