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UF520 Fiches technique(PDF) 2 Page - Unisonic Technologies |
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UF520 Fiches technique(HTML) 2 Page - Unisonic Technologies |
2 / 6 page UF520 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-659.a ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V TC=25°C 9.2 A Continuous TC=100°C ID 6.5 A Drain Current Pulsed (Note 2) IDM 37 A Single Pulsed Avalanche Energy (Note 3) EAS 36 mJ Power Dissipation PD 50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve 3. VDD=25V, starting TJ=25°C, L=640mH, RG=25Ω, peak IAS=9.2A THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 80 °C/W Junction to Case θJC 2.5 °C/W |
Numéro de pièce similaire - UF520_15 |
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Description similaire - UF520_15 |
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