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TC623CVOA Fiches technique(PDF) 2 Page - Microchip Technology |
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TC623CVOA Fiches technique(HTML) 2 Page - Microchip Technology |
2 / 12 page TC623 DS21441B-page 2 © 2002 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* Supply Voltage ......................................................5.5V Input Voltage Any Input .. (GND – 0.3V) to (VDD +0.3V) Package Power Dissipation (TA ≤ 70°C) Plastic DIP .............................................730mW SOIC......................................................470mW Derating Factors Plastic DIP ............................................8mW/°C SOIC .....................................................6mW/°C Operating Temperature V Version ................................. -40°C to +125°C E Version ................................... -40°C to +85°C C Version ...................................... 0°C to +70°C Storage Temperature.......................... -65°C to +150°C *Stresses above those listed under "Absolute Maximum Rat- ings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Expo- sure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TC623 ELECTRICAL SPECIFICATIONS Electrical Characteristics: Over Operating Temperature Range, VDD = 2.7V to 4.5V, unless otherwise specified. Symbol Parameter Min Typ. Max Unit Test Conditions VDD Supply Voltage Range 2.7 — 4.5 V IDD Supply Current — 150 250 µA2.7V ≤ V DD ≤ 4.5V TSET Absolute Accuracy T - 3 T ±1 T + 3 °C T = Programmed Temperature VOH Output Voltage High 0.9 x VDD 0.8 x VDD — — — — V V IOH =250µA IOH =500µA VOL Output Voltage Low — — — — 0.1 x VDD 0.2 x VDD V V IOL =500 µA IOL =1mA HYS Hysteresis — — -2 °C Falling Temperature |
Numéro de pièce similaire - TC623CVOA |
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