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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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ISL9V3040D3S Fiches technique(PDF) 3 Page - Unisonic Technologies |
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ISL9V3040D3S Fiches technique(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page  ISL9V3040D3S Insulated Gate Bipolar Transistor UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R219-011.F ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off State Characteristics Collector to Emitter Breakdown Voltage BVCER IC=2mA, VGE=0V, RG=1KΩ, TJ=-40~150°C 350 400 450 V Collector to Emitter to Breakdown Voltage BVCES IC=10mA, VGE=0V, RG=0, TJ=-40~150°C 400 450 500 V Emitter to Collector Breakdown Voltage BVECS IC=-75mA, VGE=0V, TC=25°C 30 V Gate to Emitter Breakdown Voltage BVGES IGES=±2mA ±12 ±14 V TC=25°C 25 µA Collector to Emitter Leakage Current ICER VCER=250V, RG=1KΩ TC=150°C 1 mA TC=25°C 1 mA Emitter to Collector Leakage Current IECS VEC=24V TC=150°C 40 mA Series Gate Resistance R1 70 Ω Gate to Emitter Resistance R2 10K 26K Ω On State Characteristics IC=6A, VGE=4V TC=25°C 1.25 1.60 V IC=10A, VGE=4.5V TC=150°C 1.40 1.80 V Collector to Emitter Saturation Voltage VCE(SAT) IC=15A, VGE=4.5V TC=150°C 1.90 2.20 V Dynamic Characteristics Gate Charge QG(ON) IC=10A, VCE=12V, VGE=5V 17 nC Gate to Emitter Threshold Voltage VGE(TH) IC=1.0mA, VCE=VGE 1.3 2.2 V Gate to Emitter Plateau Voltage VGEP IC=10A, VCE=12V 3.0 V Switching Characteristics Current Turn-On Delay Time-Resistive td(ON)R 0.48 4 μs Current Rise Time-Resistive trR 2.1 7 μs Current Turn-Off Delay Time-Inductive td(OFF)L 1.4 15 μs Current Fall Time Inductive tfL VCE=14V, RL=1Ω, VGE=5V, RG=1KΩ, TJ=25°C 2.2 15 μs Self Clamped Inductive Switching SCIS TJ= 25°C, L=3.0mHy, RG=1KΩ, VGE=5V 300 mJ Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature |
Numéro de pièce similaire - ISL9V3040D3S_15 |
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Description similaire - ISL9V3040D3S_15 |
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