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BUK7508-55A Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce BUK7508-55A
Description  N-channel TrenchMOS standard level FET
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK7508-55A Fiches technique(HTML) 3 Page - NXP Semiconductors

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BUK7508-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 03 — 14 June 2010
3 of 14
NXP Semiconductors
BUK7508-55A
N-channel TrenchMOS standard level FET
4.
Limiting values
[1]
Current is limited by power dissipation chip rating.
[2]
Continuous current is limited by package.
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
--55
V
VDGR
drain-gate voltage
RGS =20kΩ
--55
V
VGS
gate-source voltage
-20
-
20
V
ID
drain current
Tmb =25°C; VGS =10V; see Figure 1;
see Figure 3
[1]
-
-
126
A
Tmb =100 °C; VGS = 10 V; see Figure 1
[2]
--75
A
Tmb =25°C; VGS =10V; see Figure 1;
see Figure 3
[2]
--75
A
IDM
peak drain current
Tmb =25°C; tp ≤ 10 µs; pulsed;
see Figure 3
-
-
504
A
Ptot
total power dissipation
Tmb =25°C; see Figure 2
-
-
254
W
Tstg
storage temperature
-55
-
175
°C
Tj
junction temperature
-55
-
175
°C
Source-drain diode
IS
source current
Tmb =25°C
[2]
--75
A
[1]
-
-
126
A
ISM
peak source current
tp ≤ 10 µs; pulsed; Tmb = 25 °C
-
-
504
A
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
ID =75A; Vsup ≤ 55 V; RGS =50 Ω;
VGS =10V; Tj(init) = 25 °C; unclamped
-
-
670
mJ


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