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BUK7508-55A Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BUK7508-55A Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 14 page BUK7508-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 14 June 2010 3 of 14 NXP Semiconductors BUK7508-55A N-channel TrenchMOS standard level FET 4. Limiting values [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package. Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C --55 V VDGR drain-gate voltage RGS =20kΩ --55 V VGS gate-source voltage -20 - 20 V ID drain current Tmb =25°C; VGS =10V; see Figure 1; see Figure 3 [1] - - 126 A Tmb =100 °C; VGS = 10 V; see Figure 1 [2] --75 A Tmb =25°C; VGS =10V; see Figure 1; see Figure 3 [2] --75 A IDM peak drain current Tmb =25°C; tp ≤ 10 µs; pulsed; see Figure 3 - - 504 A Ptot total power dissipation Tmb =25°C; see Figure 2 - - 254 W Tstg storage temperature -55 - 175 °C Tj junction temperature -55 - 175 °C Source-drain diode IS source current Tmb =25°C [2] --75 A [1] - - 126 A ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - - 504 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID =75A; Vsup ≤ 55 V; RGS =50 Ω; VGS =10V; Tj(init) = 25 °C; unclamped - - 670 mJ |
Numéro de pièce similaire - BUK7508-55A_15 |
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Description similaire - BUK7508-55A_15 |
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