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BUK7528-100A Fiches technique(PDF) 8 Page - NXP Semiconductors |
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BUK7528-100A Fiches technique(HTML) 8 Page - NXP Semiconductors |
8 / 13 page BUK7528-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 26 April 2011 8 of 13 NXP Semiconductors BUK7528-100A N-channel TrenchMOS standard level FET Tj = 25 °C; VDS = VGS VGS = 0 V; f = 1 MHz Fig 13. Sub-threshold drain current as a function of gate-source voltage Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Tj = 25 °C; ID = 25 A VGS = 0 V Fig 15. Gate-source voltage as a function of gate charge; typical values Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values 003aaf164 VGS (V) 05 4 23 1 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 98 % typical 2 % 003aaf165 VDS (V) 10−2 102 10 10−1 1 2 3 1 4 5 C (nF) 0 Ciss Coss Crss 003aaf166 QG (nC) 0 150 100 50 4 6 2 8 10 VGS (V) 0 VDD = 44 V VDD = 14 V 20 40 80 60 100 IF (A) 0 003aaf167 VSDS (V) 0 0.2 1.4 1.0 0.8 1.2 0.6 0.4 Tj = 25 °C Tj = 175 °C |
Numéro de pièce similaire - BUK7528-100A_15 |
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Description similaire - BUK7528-100A_15 |
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