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BUK7607-30B Fiches technique(PDF) 1 Page - NXP Semiconductors |
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BUK7607-30B Fiches technique(HTML) 1 Page - NXP Semiconductors |
1 / 14 page 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Quick reference data [1] Continuous current is limited by package. BUK7607-30B N-channel TrenchMOS standard level FET Rev. 02 — 21 February 2011 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C --30 V ID drain current VGS =10V; Tmb =25°C; see Figure 3 [1] --75 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 --157 W Static characteristics RDSon drain-source on-state resistance VGS =10V; ID =25A; Tj =25°C; see Figure 11; see Figure 12 -5.9 7 m Ω Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID =75A; Vsup ≤ 30 V; RGS =50 Ω; VGS =10V; Tj(init) = 25 °C; unclamped --329 mJ Dynamic characteristics QGD gate-drain charge VGS =10V; ID =25A; VDS =24 V; Tj =25°C; see Figure 13 -12 - nC |
Numéro de pièce similaire - BUK7607-30B_15 |
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Description similaire - BUK7607-30B_15 |
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