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BUK7607-30B Fiches technique(PDF) 1 Page - NXP Semiconductors

No de pièce BUK7607-30B
Description  N-channel TrenchMOS standard level FET
Download  14 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK7607-30B Fiches technique(HTML) 1 Page - NXP Semiconductors

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1.
Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
[1]
Continuous current is limited by package.
BUK7607-30B
N-channel TrenchMOS standard level FET
Rev. 02 — 21 February 2011
Product data sheet
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
--30
V
ID
drain current
VGS =10V; Tmb =25°C;
see Figure 3
[1]
--75
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
--157
W
Static characteristics
RDSon
drain-source on-state
resistance
VGS =10V; ID =25A;
Tj =25°C; see Figure 11;
see Figure 12
-5.9
7
m
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
ID =75A; Vsup ≤ 30 V;
RGS =50 Ω; VGS =10V;
Tj(init) = 25 °C; unclamped
--329
mJ
Dynamic characteristics
QGD
gate-drain charge
VGS =10V; ID =25A;
VDS =24 V; Tj =25°C;
see Figure 13
-12
-
nC


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