BUK7610-55AL_2

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 02 — 9 January 2008

3 of 13

NXP Semiconductors

BUK7610-55AL

N-channel TrenchMOS standard level FET

[1]

Current is limited by power dissipation chip rating.

[2]

Refer to document 9397 750 12572 for further information.

[3]

Continuous current is limited by package.

[4]

Single shot avalanche rating limited by maximum junction temperature of 175

°C.

[5]

Repetitive avalanche rating limited by average junction temperature of 170

°C.

[6]

Refer to application note AN10273 for further information.

Fig 1.

Continuous drain current as a function of

mounting base temperature

Fig 2.

Normalized total power dissipation as a

function of mounting base temperature

Fig 3.

Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period

003aaa726

0

50

100

150

0

50

100

150

200

°C)

(A)

(1)

03aa16

0

40

80

120

0

50

100

150

200

°C)

(%)

V

GS

10 V

(1) Capped at 75 A due to package.

P

P

tot

P

tot(25°C)

× 100 %

003aaa739

10

-1

1

10

10

2

10

-2

10

-1

1

10

(A)

150 ˚C

(3)

(2)

(1)

(1) Single shot.

(2) Single shot.

(3) Repetitive.