PZTA92G-AA3-R datasheet(2/4 Pages) UTC

No de pièce	PZTA92G-AA3-R

Description	HIGH VOLTAGE TRANSISTOR

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Fabricant	UTC [Unisonic Technologies]

Site Internet	http://www.utc-ic.com

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2 / 4 page

PZTA92/93

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R207-006.E



ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

PZTA92

VCBO

-300

V

PZTA93

-200

V

Collector-Emitter Voltage

PZTA92

VCEO

-300

V

PZTA93

-200

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-500

mA

Collector Power Dissipation

Pc

1

W

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=-100μA, IE=0

PZTA92

-300

V

PZTA93

-200

V

Collector-Emitter Breakdown Voltage

BVCEO

IC =-1mA, IB=0

PZTA92

-300

V

PZTA93

-200

V

Emitter-Base Breakdown Voltage

BVEBO

IE=-100μA, IC =0

-5

V

Collector Cut-Off Current

ICBO

VCB=-200V, IE=0

PZTA92

-0.25

μA

VCB=-160V, IE=0

PZTA93

-0.25

μA

Emitter Cut-Off Current

IEBO

VEB=-3V, IC =0

-0.10

μA

DC Current Gain (Note)

hFE

VCE=-10V, IC =-1mA

60

VCE=-10V, IC =-10mA

80

VCE=-10V, IC =-30mA

80

Collector-Emitter Saturation Voltage

VCE(SAT) IC =-20mA, IB=-2mA

-0.5

V

Base-Emitter Saturation Voltage

VBE(SAT) IC =-20mA, IB=-2mA

-0.90

V

Current Gain Bandwidth Product

fT

VCE=-20V,Ic=-10mA, f=100MHz

50

MHz

Collector Base Capacitance

CCB

VCB=-20V, IE=0, f=1MHz

PZTA92

6

pF

PZTA93

8

pF

Note: Pulse test: PW<300μs, Duty Cycle<2%, VCE (SAT) <200mV (Class SIN)

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