BUK663R5-55C_15 datasheet(2/14 Pages) PHILIPS

No de pièce	BUK663R5-55C

Description	N-channel TrenchMOS intermediate level FET

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Fabricant	PHILIPS [NXP Semiconductors]

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BUK663R5-55C

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Product data sheet

Rev. 2 — 23 December 2010

2 of 14

NXP Semiconductors

BUK663R5-55C

N-channel TrenchMOS intermediate level FET

[1]

Continuous current is limited by package.

2.

Pinning information

3.

Ordering information

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source

avalanche energy

ID =120 A; Vsup ≤ 55 V;

RGS =50 Ω; VGS =10V;

Tj(init) = 25 °C; unclamped;

see Figure 3

--455

mJ

Dynamic characteristics

QGD

gate-drain charge

ID =25A; VDS =40 V;

VGS = 10 V; see Figure 15;

see Figure 14

-56

-

nC

Table 1.

Quick reference data …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 2.

Pinning information

Symbol

Description

Simplified outline

Graphic symbol

1

G

gate

SOT404 (D2PAK)

2

D

drain

3S

source

mb

D

mounting base; connected to

drain

mb

13

2

S

D

G

mbb076

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BUK663R5-55C

D2PAK

plastic single-ended surface-mounted package (D2PAK); 3 leads

(one lead cropped)

SOT404

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