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BUK663R5-55C Fiches technique(PDF) 8 Page - NXP Semiconductors |
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BUK663R5-55C Fiches technique(HTML) 8 Page - NXP Semiconductors |
8 / 14 page BUK663R5-55C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 — 23 December 2010 8 of 14 NXP Semiconductors BUK663R5-55C N-channel TrenchMOS intermediate level FET Fig 10. Sub-threshold drain current as a function of gate-source voltage Fig 11. Gate-source threshold voltage as a function of junction temperature Fig 12. Drain-source on-state resistance as a function of drain current; typical values Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature 003aad806 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 01 23 4 VGS (V) ID (A) max typ min 003aae542 0 1 2 3 4 -60 0 60 120 180 Tj ( °C) VGS(th) (V) max @1mA typ @1mA min @2.5mA 003aae392 0 4 8 12 16 0 25 50 75 100 ID (A) RDSon (m Ω) 8.0 6.0 10 3.6 4.5 3.8 VGS (V) = 5.0 4.0 003aad803 0 0.5 1 1.5 2 2.5 -60 0 60 120 180 Tj ( °C) a |
Numéro de pièce similaire - BUK663R5-55C_15 |
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Description similaire - BUK663R5-55C_15 |
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