BUK763R1-40B_15 datasheet(2/13 Pages) PHILIPS

No de pièce	BUK763R1-40B

Description	N-channel TrenchMOS standard level FET

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Fabricant	PHILIPS [NXP Semiconductors]

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BUK763R1-40B

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Product data sheet

Rev. 03 — 8 February 2011

2 of 13

NXP Semiconductors

BUK763R1-40B

N-channel TrenchMOS standard level FET

[1]

Continuous current is limited by package.

2.

Pinning information

[1]

It is not possible to make a connection to pin 2.

3.

Ordering information

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source

avalanche energy

ID =75A; Vsup ≤ 40 V;

RGS =50 Ω; VGS =10V;

Tj(init) = 25 °C; unclamped

--1.6

J

Dynamic characteristics

QGD

gate-drain charge

VGS =10V; ID =25A;

VDS =32 V; Tj =25°C;

see Figure 13

-29

-nC

Table 1.

Quick reference data …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 2.

Pinning information

Symbol

Description

Simplified outline

Graphic symbol

1

G

gate

SOT404 (D2PAK)

2

D

drain[1]

3S

source

mb

D

mounting base; connected to

drain

mb

13

2

S

D

G

mbb076

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BUK763R1-40B

D2PAK

plastic single-ended surface-mounted package (D2PAK); 3 leads

(one lead cropped)

SOT404

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