BUK6607-55C

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Product data sheet

Rev. 1 — 14 October 2010

7 of 14

NXP Semiconductors

BUK6607-55C

N-channel TrenchMOS logic and standard level FET

Source-drain diode

source-drain voltage

see Figure 16

-0.8

1.2

V

reverse recovery time

-48

-

ns

recovered charge

-

86

-

nC

Table 6.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 5.

Forward transconductance as a function of

drain current; typical values

Fig 6.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 7.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 8.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

003aae891

0

60

90

120

0

2040

6080

(S)

30

003aae892

0

20

40

60

80

100

0

0.5

1

1.5

2

(A)

3.2

3.4

3.6

3.8

4

4.5

5

003aaf007

0

5

10

15

20

0

5

10

15

20

V

R

DSon

(m

Ω)

003aae928

0

20

40

60

80

0246

V

I

D

(A)

T

T