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BUK7623-75A Fiches technique(PDF) 6 Page - NXP Semiconductors |
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BUK7623-75A Fiches technique(HTML) 6 Page - NXP Semiconductors |
6 / 13 page BUK7623-75A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 2 February 2011 6 of 13 NXP Semiconductors BUK7623-75A N-channel TrenchMOS standard level FET Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values Fig 7. Sub-threshold drain current as a function of gate-source voltage Fig 8. Forward transconductance as a function of drain current; typical values VDS (V) 010 8 46 2 03nb06 80 120 40 160 200 ID (A) 0 VGS (V) = 20 10 9 8 7 6 5 03nb05 VGS (V) 520 15 10 20 16 24 28 RDSon (m Ω) 12 03aa35 VGS (V) 06 4 2 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 min typ max ID (A) 080 60 20 40 03nb03 20 10 30 40 gfs (S) 0 |
Numéro de pièce similaire - BUK7623-75A_15 |
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Description similaire - BUK7623-75A_15 |
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