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BUK7613-75B Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BUK7613-75B Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 13 page BUK7613-75B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 27 December 2011 2 of 13 NXP Semiconductors BUK7613-75B N-channel TrenchMOS standard level FET 2. Pinning information [1] It is not possible to make connection to pin 2. 3. Ordering information 4. Limiting values Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate SOT404 (D2PAK) 2 D drain[1] 3S source mb D mounting base; connected to drain mb 13 2 S D G mbb076 Table 3. Ordering information Type number Package Name Description Version BUK7613-75B D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 75 V VDGR drain-gate voltage RGS =20kΩ -75 V VGS gate-source voltage -20 20 V ID drain current Tmb = 100 °C; VGS =10 V; see Figure 1 -54 A Tmb =25 °C; VGS =10 V; see Figure 1; see Figure 3 -75 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 - 304 A Ptot total power dissipation Tmb =25 °C; see Figure 2 - 157 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain diode IS source current Tmb =25 °C - 75 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 304 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID =75A; Vsup ≤ 75 V; RGS =50 Ω; VGS =10 V; Tj(init) = 25 °C; unclamped - 125 mJ |
Numéro de pièce similaire - BUK7613-75B_15 |
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Description similaire - BUK7613-75B_15 |
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