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BUK7506-55A Fiches technique(PDF) 4 Page - NXP Semiconductors |
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BUK7506-55A Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 13 page BUK7506-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 03 — 2 February 2011 4 of 13 NXP Semiconductors BUK7506-55A N-channel TrenchMOS standard level FET 5. Thermal characteristics Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 03nf32 1 10 102 103 1 10 102 VDS (V) ID (A) D.C. 100 ms 10 ms RDSon = VDS / ID 1 ms tp = 10 μs 100 μs Capped at 75 A due to package tp tp T P t T δ = Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 --0.5 K/W Rth(j-a) thermal resistance from junction to ambient vertical in still air - 60 - K/W Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration 03nf33 Single Shot 0.2 0.1 0.05 0.02 10−3 10−2 10−1 1 10−6 10−5 10−4 10−3 10−2 10−1 1 tp (s) Zth(j-mb) (K/W) δ = 0.5 tp tp T P t T δ = |
Numéro de pièce similaire - BUK7506-55A_15 |
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Description similaire - BUK7506-55A_15 |
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