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ESD5V5U5ULC Fiches technique(PDF) 11 Page - Infineon Technologies AG |
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ESD5V5U5ULC Fiches technique(HTML) 11 Page - Infineon Technologies AG |
11 / 16 page ESD5V5U5ULC Characteristics Final Data Sheet 11 Revision 1.3, 2015-07-16 Figure 9 TLP characteristic I/O to GND Note: [2] Figure 10 TLP characteristic GND to I/O Note: [2] Note: TLP parameter: Z 0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistic between I PP1 = 10 A and IPP2 = 40 A. The equivalent stress level V IEC according IEC 61000-4-2 (R = 330 Ω , C = 150 pF) is calculated at the broad peak of the IEC waveform at t = 30 ns with 2 A / kV 0 10 20 30 40 50 60 5 10 15 20 25 0 5 10 15 20 25 30 VTLP [V] ESD5V5U5ULC RDYN RDYN=0.2Ω 0 10 20 30 40 50 60 5 10 15 20 25 0 5 10 15 20 25 30 VTLP [V] ESD5V5U5ULC RDYN RDYN=0.3Ω |
Numéro de pièce similaire - ESD5V5U5ULC_15 |
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Description similaire - ESD5V5U5ULC_15 |
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