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BUK762R6-60E Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce BUK762R6-60E
Description  N-channel TrenchMOS standard level FET
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK762R6-60E Fiches technique(HTML) 3 Page - NXP Semiconductors

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NXP Semiconductors
BUK762R6-60E
N-channel TrenchMOS standard level FET
BUK762R6-60E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
13 July 2012
3 / 12
Symbol
Parameter
Conditions
Min
Max
Unit
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
ID = 120 A; Vsup ≤ 60 V; RGS = 50 Ω;
VGS = 60 V; Tj(init) = 25 °C; unclamped;
Fig. 3
[2][3]
-
519
mJ
[1] Continuous current is limited by package.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Refer to application note AN10273 for further information.
003aah660
0
60
120
180
240
0
50
100
150
200
Tmb(°C)
ID
(A)
(1)
(1) Capped at 120A due to package
Fig. 1. Continuous drain current as a function of
mounting base temperature
Tmb (°C)
0
200
150
50
100
03aa16
40
80
120
Pder
(%)
0
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
003aah661
10-1
1
10
102
103
10-3
10-2
10-1
1
10
tAL(ms)
IAL
(A)
(1)
(2)
(3)
Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time


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