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BAP64-04 Fiches technique(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BAP64-04 Fiches technique(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
4 / 8 page 1999 Sep 21 4 Philips Semiconductors Product specification Silicon PIN diode BAP64-04 GRAPHICAL DATA handbook, halfpage 102 10 1 10−1 MCD777 10−1 1 IF (mA) rD ( Ω) 10 102 Fig.2 Forward resistance as a function of forward current; typical values. f = 100 MHz; Tj =25 °C. handbook, halfpage 020 600 0 200 400 4 VR (V) Cd (fF) 12 816 MCD778 Fig.3 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 0.5 3 0 −5 S21 2 (dB) −4 −3 −2 −1 1 f (GHz) (1) (2) (3) (4) 1.5 2 2.5 MCD779 Fig.4 Insertion loss ( |S21|2) of the diode as a function of frequency; typical values. (1) IF = 100 mA. (2) IF =10mA. (3) IF = 1 mA. (4) IF = 0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb =25 °C. handbook, halfpage 0.5 3 0 −30 −20 −10 1 f (GHz) 1.5 2 2.5 MCD780 S21 2 (dB) Fig.5 Isolation ( |S21|2) of the diode as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb =25 °C. |
Numéro de pièce similaire - BAP64-04_15 |
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Description similaire - BAP64-04_15 |
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