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BUK6E2R3-40C Fiches technique(PDF) 1 Page - NXP Semiconductors |
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BUK6E2R3-40C Fiches technique(HTML) 1 Page - NXP Semiconductors |
1 / 15 page 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 1.4 Quick reference data BUK6E2R3-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 18 August 2010 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C --40 V ID drain current VGS =10V; Tmb =25°C; see Figure 1 [1] --120 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 --306 W Static characteristics RDSon drain-source on-state resistance VGS =10V; ID =25A; Tj =25°C; see Figure 11; see Figure 12 -2 2.3 m Ω |
Numéro de pièce similaire - BUK6E2R3-40C_15 |
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Description similaire - BUK6E2R3-40C_15 |
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