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BUK6C2R1-55C Fiches technique(PDF) 8 Page - NXP Semiconductors |
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BUK6C2R1-55C Fiches technique(HTML) 8 Page - NXP Semiconductors |
8 / 13 page BUK6C2R1-55C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 3 — 18 January 2012 8 of 13 NXP Semiconductors BUK6C2R1-55C N-channel TrenchMOS intermediate level FET Tj = 25 °C; ID = 180 A Fig 13. Gate-source voltage as a function of gate charge; typical values Fig 14. Gate charge waveform definitions VGS = 0 V; f = 1 MHz VGS = 0 V Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values 003aaf973 0 2 4 6 8 10 0 100 200 300 QG (nC) VGS (V) VDS = 44V 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) 003aaf970 10 2 10 3 10 4 10 5 10 -1 1 10 10 2 VDS (V) C (pF) Ciss Crss Coss 003aaf974 0 100 200 300 00.5 11.5 VSD (V) IS (A) Tj = 25 °C Tj = 175 °C |
Numéro de pièce similaire - BUK6C2R1-55C_15 |
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Description similaire - BUK6C2R1-55C_15 |
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