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IRLR8259PBF Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRLR8259PBF
Description  Ultra-Low Gate Impedance
Download  11 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRLR8259PBF Fiches technique(HTML) 1 Page - International Rectifier

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www.irf.com
1
12/16/08
IRLR8259PbF
IRLU8259PbF
HEXFET® Power MOSFET
Notes
 through … are on page 11
Applications
Benefits
PD - 97360
D-Pak
IRLR8259PbF
I-Pak
IRLU8259PbF
G
S
D
G
D
S
GD
S
Gate
Drain
Source
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l RoHS compliant
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
VDSS RDS(on) max
Qg
25V
8.7mΩ
6.8nC
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
™
PD @TC = 25°C
Maximum Power Dissipation
g
W
PD @TC = 100°C Maximum Power Dissipation g
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
3.15
RθJA
Junction-to-Ambient (PCB Mount)
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
48
Max.
57
f
40
f
230
± 20
25
0.32
24
300 (1.6mm from case)
-55 to + 175


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