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MTB11N03BQ8 Fiches technique(PDF) 2 Page - Cystech Electonics Corp. |
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MTB11N03BQ8 Fiches technique(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : CA00Q8 Issued Date : 2015.05.01 Revised Date : Page No. : 2/9 MTB11N03BQ8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol 10s Steady State Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±25 V Continuous Drain Current @ TA=25 °C, VGS=10V*3 12 8.3 Continuous Drain Current @ TA=70 °C, VGS=10V*3 ID 7.6 6.6 Pulsed Drain Current IDM 48 *1 Avalanche Current IAS 12 A Avalanche Energy @ L=1mH, ID=12A, RG=25Ω EAS 72 Repetitive Avalanche Energy @ L=0.05mH EAR 5 *2 mJ TA=25℃ 2.5 1.4 Total Power Dissipation *3 TA=70℃ PD 1.6 0.9 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Typical Maximum Unit t≤10s 35 40 Thermal Resistance, Junction-to-ambient *3 Steady State RθJA 70 85 Thermal Resistance, Junction-to case Steady State RθJC 16 25 °C/W Note : 1. Pulse width limited by maximum junction temperature. 2. Duty cycle≤1%. 3. Surface mounted on 1 in² copper pad of FR-4 board; 125 °C/W when mounted on minimum copper pad. Characteristics (TC=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - VGS=0V, ID=250μA VGS(th) 1.0 - 2.5 V VDS = VGS, ID=250μA GFS *1 - 19 - S VDS =5V, ID=11A IGSS - - ± 100 nA VGS=±25V - - 1 VDS =30V, VGS =0V IDSS - - 5 μA VDS =24V, VGS =0V, Tj=55 °C - 8.8 12 mΩ VGS =10V, ID=12A RDS(ON) *1 - 12.8 17 mΩ VGS =4.5V, ID=12A Dynamic Ciss - 751 - Coss - 199 - Crss - 106 - pF VGS=0V, VDS=10V, f=1MHz |
Numéro de pièce similaire - MTB11N03BQ8 |
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Description similaire - MTB11N03BQ8 |
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