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2SC2590 Fiches technique(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC2590 Fiches technique(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
1 / 4 page JMnic Product Specification Silicon NPN Power Transistors 2SC2590 DESCRIPTION ・ ・With TO-126 package ・Complement to type 2SA1110 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT ・Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute Maximun Ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 0.5 A ICM Collector current-Peak 1.0 A PC Collector power dissipation TC=25℃ 1.2* W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Note) *: Without heat sink |
Numéro de pièce similaire - 2SC2590_15 |
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Description similaire - 2SC2590_15 |
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