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IRFB4510PBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRFB4510PBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 8 page 4/10/12 www.irf.com 1 HEXFET® Power MOSFET S D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits TO-220AB IRFB4510PbF S D G D IRFB4510PbF GD S Gate Drain Source PD - 97772 Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery e V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy d mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy f mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case i ––– 1.05 RθCS Case-to-Sink, Flat Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient, TO-220 i ––– 62 130 See Fig. 14, 15, 22a, 22b, 140 3.2 -55 to + 175 ± 20 0.95 10lb xin (1.1Nxm) 300 Max. 62 44 250 VDSS 100V RDS(on) typ. 10.7mΩ max. 13.5mΩ ID (Silicon Limited) 62A |
Numéro de pièce similaire - IRFB4510PBF_15 |
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Description similaire - IRFB4510PBF_15 |
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