IRFAF50

2

www.irf.com

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction to Case

—

—

0.83

RthJA

Junction to Ambient

—

—

30

Typical socket mount

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ

Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

6.2

ISM

Pulse Source Current (Body Diode) ➀

——

2 5

VSD

Diode Forward Voltage

—

—

1.8

V

t rr

Reverse Recovery Time

—

—

1500

nS

Tj = 25°C, IF =6.2A, di/dt ≤ 100A/µs

QRR

Reverse Recovery Charge

—

—

1 1

µC

VDD ≤ 50V ➃

t on

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

For footnotes refer to the last page

Parameter

Min

Typ

Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

9 00

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

1.2

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

1.6

VGS = 10V, ID =4.0A ➃

Resistance

—

—

1.85

VGS = 10V, ID =6.2A ➃

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID =250µA

gfs

Forward Transconductance

4.9

—

—

S ( )VDS > 15V, IDS =4.0A ➃

IDSS

Zero Gate Voltage Drain Current

—

—

2 5

VDS=720V, VGS=0V

—

—

250

VDS =720V

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Total Gate Charge

8 0

—

1 8 0

VGS = 10V, ID = 6.2A

Qgs

Gate-to-Source Charge

7.5

—

1 7

nC

VDS = 450V

Qgd

Gate-to-Drain (‘Miller’) Charge

4 8

—

110

Turn-On Delay Time

—

—

3 3

VDD = 400V*, ID =6.2A,

t r

Rise Time

—

—

6 6

RG =2.35Ω

Turn-Off Delay Time

—

—

200

tf

Fall Time

—

—

5 7

LS + LD

Total Inductance

—

6.1

—

Ciss

Input Capacitance

—

2700

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

500

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

200

—

nA

µA

Ω

*Equipment Limitation