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IRF7739L1PBF Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRF7739L1PBF
Description  Optimized for Synchronous Rectification
Download  10 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF7739L1PBF Fiches technique(HTML) 1 Page - International Rectifier

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DirectFET
™ Power MOSFET ‚
Typical values (unless otherwise specified)
Applicable DirectFET Outline and Substrate Outline

l RoHS Compliant, Halogen Free
‚
l Lead-Free (Qualified up to 260°C Reflow)

l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

l Industrial Qualified
Fig 1. Typical On-Resistance vs. Gate Voltage
 Click on the hyperlink (to the relevant technical document) for more details.
‚ Click on the hyperlink (to the DirectFET website) for more details
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.021mH, RG = 25Ω, IAS = 160A.
Notes:
Fig 2. Typical On-Resistance vs. Drain Current
SB
SC
M2
M4
L4
L6
L8
DirectFET
™ ISOMETRIC
L8
Description
The IRF7739L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems.
The IRF7739L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the
device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance power converters.
VDSS
VGS
RDS(on)
40V min ±20V max 0.70mΩ@ 10V
Qg tot
Qgd
Vgs(th)
220nC
81nC
2.8V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
A
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)e
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited) f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
160
375
270
Max.
190
46
1070
±20
40
270
5.0
5.5
6.0
6.5
7.0
7.5
8.0
VGS, Gate -to -Source Voltage (V)
0
2
4
6
8
10
ID = 160A
TJ = 125°C
TJ = 25°C
0
40
80
120
160
200
ID , Drain Current (A)
0.85
0.86
0.87
0.88
0.89
0.90
0.91
0.92
0.93
VGS = 10V
D
D
G
S
S
S
S
S
S
S
S
IRF7739L1TRPbF
Applications
1
www.irf.com
© 2012 International Rectifier
February 13 ,2013
Ordering Information
Base part number
Package Type
Orderable Part Number
Form
Quantity
IRF7739L1TRPbF
DirectFET Large Can
Tape and Reel
4000
IRF7739L1TRPbF
Standard Pack


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