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MTB050P10J3 Fiches technique(PDF) 1 Page - Cystech Electonics Corp. |
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MTB050P10J3 Fiches technique(HTML) 1 Page - Cystech Electonics Corp. |
1 / 9 page CYStech Electronics Corp. Spec. No. : C975J3 Issued Date : 2015.03.17 Revised Date : Page No. : 1/9 MTB050P10J3 CYStek Product Specification P-Channel Enhancement Mode Power MOSFET MTB050P10J3 Features • Single Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating and halogen-free package Symbol Outline Ordering Information Device Package Shipping MTB050P10J3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel TO-252(DPAK) MTB050P10J3 G:Gate D:Drain S:Source BVDSS -100V -24A ID@VGS=-10V, TC=25°C ID@VGS=-10V, TC=100°C -17A -4.1A ID@VGS=-10V, TA=25°C -3.3A ID@VGS=-10V, TA=70°C RDS(ON)@VGS=-10V, ID=-15A 45 mΩ(typ) RDS(ON)@VGS=-4.5V, ID=-12A 51 mΩ(typ) G D S Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name |
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