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IRLR3636PBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRLR3636PBF Fiches technique(HTML) 2 Page - International Rectifier |
2 / 10 page IRLR/U3636PbF 2 www.irf.com S D G
Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniquea refer to applocation note # AN- 994 echniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C. Notes: Calcuted continuous current based on maximum allowable junction temperature Bond wire current limit is 50A. Note that current limitation arising from heating of the device leds may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.136 mH RG = 25Ω, IAS = 50A, VGS =10V. Part not recommended for use above this value . ISD ≤ 50A, di/dt ≤ 1109 A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C ––– 5.4 6.8 ––– 6.6 8.3 VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG(int) Internal Gate Resistance ––– 0.6 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 31 ––– ––– S Qg Total Gate Charge ––– 33 49 Qgs Gate-to-Source Charge ––– 11 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 15 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 18 ––– td(on) Turn-On Delay Time ––– 45 ––– tr Rise Time ––– 216 ––– td(off) Turn-Off Delay Time ––– 43 ––– tf Fall Time ––– 69 ––– Ciss Input Capacitance ––– 3779 ––– Coss Output Capacitance ––– 332 ––– Crss Reverse Transfer Capacitance ––– 163 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related)iÖ–– 437 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) h ––– 636 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ãd VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 27 ––– TJ = 25°C VR = 51V, ––– 32 ––– TJ = 125°C IF = 50A Qrr Reverse Recovery Charge ––– 31 ––– TJ = 25°C di/dt = 100A/µs g ––– 43 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 2.1 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = -16V showing the VDS = 30V Conditions VGS = 4.5V g VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 48V i,See Fig.11 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 5mAd VGS = 10V, ID = 50A g VDS = VGS, ID = 100µA VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125°C ns VGS = 0V, VDS = 0V to 48V h MOSFET symbol TJ = 25°C, IS = 50A, VGS = 0V g integral reverse p-n junction diode. VGS = 16V nC µA nA nC ns RDS(on) Static Drain-to-Source On-Resistance pF A 99 396 ––– ––– ––– ––– VGS = 4.5V, ID = 50A g m Ω ID = 50A RG = 7.5 Ω VGS = 4.5V g VDD = 39V ID = 50A, VDS =0V, VGS = 4.5V Conditions VDS = 25V, ID = 50A ID = 50A |
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