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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRLML0100PBF-1 Fiches technique(PDF) 2 Page - International Rectifier |
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IRLML0100PBF-1 Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 9 page  2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 27, 2014 IRLML0100PbF-1 Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C ––– 190 235 ––– 178 220 VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V IDSS ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 1.3 ––– Ω gfs Forward Transconductance 5.7 ––– ––– S Qg Total Gate Charge ––– 2.5 ––– Qgs Gate-to-Source Charge ––– 0.5 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 1.2 ––– td(on) Turn-On Delay Time ––– 2.2 ––– tr Rise Time ––– 2.1 ––– td(off) Turn-Off Delay Time ––– 9.0 ––– tf Fall Time ––– 3.6 ––– Ciss Input Capacitance ––– 290 ––– Coss Output Capacitance ––– 27 ––– Crss Reverse Transfer Capacitance ––– 13 ––– Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 20 30 ns Qrr Reverse Recovery Charge ––– 13 20 nC ––– ––– ––– ––– pF A 1.1 7.0 VDD =50Vd nA nC ns VDS = VGS, ID = 25μA VDS =100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C RDS(on) VGS = 10V, ID = 1.6A d Static Drain-to-Source On-Resistance Drain-to-Source Leakage Current μA m Ω Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 1.3A d MOSFET symbol showing the VDS =50V Conditions VGS = 4.5V VGS = 0V VDS = 25V ƒ = 1.0MHz RG = 6.8 Ω VGS = 4.5V d di/dt = 100A/μs d VGS = 16V VGS = -16V TJ = 25°C, IS = 1.1A, VGS = 0V d integral reverse p-n junction diode. VDS = 50V, ID = 1.6A ID = 1.6A ID = 1.0A TJ = 25°C, VR = 50V, IF=1.1A Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. Surface mounted on 1 in square Cu board Refer to application note #AN-994. |
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