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BAT18 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BAT18 Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 9397 750 13385 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 31 August 2004 3 of 7 Philips Semiconductors BAT18 Silicon planar diode (1) Tj = 60 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. VR = 20 V. (1) maximum values. (2) typical values. Fig 1. Forward current as a function of forward voltage. Fig 2. Reverse current as a function of junction temperature. f = 1 MHz; Tj = 25 °C. f = 200 MHz; Tj = 25 °C. Fig 3. Diode capacitance as a function of reverse voltage; typical values. Fig 4. Diode forward resistance as a function of forward current; typical values. 001aab165 VF (V) 0.3 1.5 1.1 0.7 40 60 20 80 100 IF (mA) 0 (1) (2) (3) 001aab166 102 1 10 104 103 105 IR (nA) 10−1 Tj (°C) 0 160 120 40 80 (1) (2) VR (V) 10-1 102 10 1 001aab167 0.9 1.1 0.7 1.3 1.5 Cd (pF) 0.5 2 0 102 001aab168 10 1 1 rD ( Ω) IF (mA) |
Numéro de pièce similaire - BAT18_15 |
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Description similaire - BAT18_15 |
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