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BAS21VD Fiches technique(PDF) 4 Page - NXP Semiconductors |
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BAS21VD Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 11 page NXP Semiconductors BAS21VD High-voltage switching diodes BAS21VD All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved Product data sheet 1 August 2013 4 / 11 600 IF (mA) 0 200 400 mbg384 0 2 1 VF (V) (1) (3) (2) (1) Tj = 150 °C; typical values (2) Tj = 25 °C; typical values (3) Tj = 25 °C; maximum values Fig. 1. Forward current as a function of forward voltage 10 1 10 103 102 102 104 105 1 mle165 tp (µA) IFSM (A) Based on square wave currents. Tj(init) = 25 °C Fig. 2. Non-repetitive peak forward current as a function of pulse duration; maximum values mbg381 200 0 100 Tj (°C) 10 IR (µA) 1 10- 2 102 10- 1 (1) (2) (1) VR = VRmax; maximum values (2) VR = VRmax; typical values Fig. 3. Reverse current as a function of junction temperature 0 10 VR (V) Cd (pF) 20 40 0.6 0.5 0.3 0.2 0.4 30 mle166 f = 1 MHz; Tj = 25 °C Fig. 4. Diode capacitance as a function of reverse voltage; typical values |
Numéro de pièce similaire - BAS21VD_15 |
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Description similaire - BAS21VD_15 |
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