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M32171F4VFP Datasheet(Fiches technique) 16 Page - Mitsubishi Electric Semiconductor

Numéro de pièce M32171F4VFP
Description  SINGLE-CHIP 32-BIT CMOS MICROCOMPUTER    
Télécharger  37 Pages
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Fabricant  MITSUBISHI [Mitsubishi Electric Semiconductor]
Site Internet  http://www.mitsubishichips.com
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Mitsubishi Microcomputers
16
2001-5-14 Rev.1.0
SINGLE-CHIP 32-BIT CMOS MICROCOMPUTER
32171 Group
Built-in Flash Memory and RAM
The M32171F4VFP contains 512-Kbyte flash memory and
16-Kbyte RAM. The M32171F3VFP contains 384-Kbyte
flash memory and 16-Kbyte RAM. The M32171F2VFP con-
tains 256-Kbyte flash memory and 16-Kbyte RAM.
The internal flash memory can be programmed on-board
(i.e., while being mounted on the printed circuit board). This
means that the same chip as will be used in mass-produc-
tion can be used directly from the development stage on,
allowing for system development without having to change
the printed circuit board when proceeding from trial produc-
tion to mass-production.
Built-in Virtual-Flash Emulation Function
Internal flash memory, which is divided from the first address
in units of 8 Kbyte (L banks), can be replaced in 8 -Kbyte
blocks (H70080 4000-H’0080 5FFF) from the beginning of
the internal RAM. And also the internal flash memory, which
is divided from the first address in units of 4-Kbyte area (All S
banks), can be replaced within two 4 Kbytes areas (H’0080
6000-H’0080 7FFF).
This function allows parts of the program which are fre-
quently changed during development to be altered or evalu-
ated without having to reset the microcomputer each time.
What’s more, when combined with the realtime debugger,
this function helps to reduce the program evaluation period,
because data in the RAM can be rewritten without requiring
any CPU load.
Figure 8 Virtual-Flash Emulation Areas of the M32171F4VFP (Replaced in Units of 8 Kbytes)
Note 1: If the same bank area is set in multiple virtual-flash bank registers and the virtual-flash emulation enable bit is enabled,
the corresponding internal RAM area is assigned to either bank register according to the priority FELBANK0 > FESBANK0
> FESBANK1.
Note 2: When access is made to the 8-Kbyte area (L bank) specified with pseudo-flash bank register 0, the internal RAM
area is accessed. During pseudo-flash emulation mode, RAM data can read and written to and from both the internal RAM
area and the virtual-flash setup area.
H'0000 0000
H'0000 2000
< Internal flash >
< Internal RAM >
H'0080 4000
H'0080 5FFF
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H'0000 4000
8K bytes
H'0000 1FFF
H'0000 3FFF
H'0000 5FFF
H'0007 E000
H'0007 FFFF
H'0007 C000
H'0007 DFFF
4K bytes
H'0080 6000
H'0080 7FFF
L bank 0
(8K bytes)
L bank 1
(8K bytes)
L bank 2
(8K bytes)
L bank 62
(8K bytes)
L bank 63
(8K bytes)
4K bytes




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