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BC856B Fiches technique(PDF) 1 Page - ON Semiconductor |
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BC856B Fiches technique(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2015 April, 2015 − Rev. 4 1 Publication Order Number: BC856BWT1/D BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage BC856 BC857 BC858 VCEO −65 −45 −30 V Collector-Base Voltage BC856 BC857 BC858 VCBO −80 −50 −30 V Emitter−Base Voltage VEBO −5.0 V Collector Current − Continuous IC −100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C PD 150 mW Thermal Resistance, Junction−to−Ambient RqJA 883 °C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. www.onsemi.com SC−70/SOT−323 CASE 419 STYLE 3 MARKING DIAGRAM 1 2 3 COLLECTOR 3 1 BASE 2 EMITTER See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION 1 XX M G G XX = Specific Device Code M = Date Code* G = Pb−Free Package *Date Code orientation may vary depending up- on manufacturing location. (Note: Microdot may be in either location) |
Numéro de pièce similaire - BC856B |
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