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BUJ303AD Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BUJ303AD
Description  NPN power transistor
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
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BUJ303AD Fiches technique(HTML) 2 Page - NXP Semiconductors

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BUJ303AD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 2 September 2011
2 of 14
NXP Semiconductors
BUJ303AD
NPN power transistor
2.
Pinning information
[1]
it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package.
3.
Ordering information
4.
Limiting values
Table 2.
Pinning information
Pin
Symbol
Description
Simplified outline
Graphic symbol
1
B
base
SOT428 (DPAK)
2
C
collector[1]
3E
emitter
mb
C
mounting base;
connected to collector
3
2
mb
1
sym123
C
E
B
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUJ303AD
DPAK
plastic single-ended surface-mounted package (DPAK);
3 leads (one lead cropped)
SOT428
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCESM
collector-emitter peak voltage
VBE = 0 V
-
1000
V
VCEO
collector-emitter voltage
IB = 0 A
-
500
V
IC
collector current
see Figure 1; see Figure 2; see Figure 4
-5
A
ICM
peak collector current
-
10
A
IB
base current
-
2
A
IBM
peak base current
-
4
A
Ptot
total power dissipation
Tmb ≤ 25 °C; see Figure 3
-80
W
Tstg
storage temperature
-65
150
°C
Tj
junction temperature
-
150
°C


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