BUJ303AX_15 datasheet(5/13 Pages) PHILIPS

No de pièce	BUJ303AX

Description	NPN power transistor

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BUJ303AX

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Product data sheet

Rev. 6 — 8 February 2012

5 of 13

NXP Semiconductors

BUJ303AX

NPN power transistor

6.

Isolation characteristics

7.

Characteristics

Table 6.

Isolation characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Visol(RMS)

RMS isolation voltage

50 Hz

≤ f ≤ 60 Hz; RH ≤ 65 %;

Th = 25 °C; from all terminals to external

heatsink; clean and dust free

-

2500

V

Cisol

isolation capacitance

from collector to external heatsink;

f=1MHz; Th =25°C

-10

-pF

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

ICES

collector-emitter cut-off

current

VBE =0V; VCE = 1000 V; Th =25°C;

Measured with half-sine wave voltage

(curve tracer)

--1

mA

VBE =0V; VCE = 1000 V; Th = 125 °C;

Measured with half-sine wave voltage

(curve tracer)

--2

mA

ICBO

collector-base cut-off

current

VCB = 1000 V; IE =0A; Th =25°C;

Measured with half-sine wave voltage

(curve tracer)

--1

mA

ICEO

collector-emitter cut-off

current

VCE =500 V; IB =0A; Th =25°C;

Measured with half-sine wave voltage

(curve tracer)

--0.1

mA

IEBO

emitter-base cut-off

current

VEB =9V; IC =0A; Th = 25 °C

--0.1

mA

VCEOsus

collector-emitter

sustaining voltage

IB =0A; IC = 100 mA; LC =25mH;

Th = 25 °C; see Figure 6; see Figure 7

500

-

V

VCEsat

collector-emitter

saturation voltage

IC =3.0 A; IB = 0.6 A; Th =25°C;

see Figure 8; see Figure 9

-

0.35

1.5

V

VBEsat

base-emitter saturation

voltage

IC =3.0 A; IB = 0.6 A; Th =25°C;

see Figure 10

-

1.01

1.3

V

hFE

DC current gain

IC =5mA; VCE =5V; Th =25 °C;

see Figure 11

10

22

35

IC =500 mA; VCE =5V; Th =25°C;

see Figure 11

14

25

35

hFEsat

DC saturation current

gain

IC =2.5 A; VCE =5V; Th =25°C;

see Figure 11

10

13.5

17

IC =3.0 A; VCE =5V; Th =25°C;

see Figure 11

-11

-

Dynamic Characteristics (switching times - resistive load)

ts

turn-off delay time

IC =2.5 A; IBon = 0.5 A; IBoff =-0.5A;

RL =75 Ω; Th = 25 °C; see Figure 12;

see Figure 13

-3.3

4

µs

tf

fall time

-

0.33

0.45

µs

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