BUJD203AX_15 datasheet(6/14 Pages) PHILIPS

No de pièce	BUJD203AX

Description	NPN power transistor with integrated diode

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BUJD203AX

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Product data sheet

Rev. 01 — 27 September 2010

6 of 14

NXP Semiconductors

BUJD203AX

NPN power transistor with integrated diode

7.

Characteristics

[1]

Measured with half-sine wave voltage (curve tracer)

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

ICES

collector-emitter cut-off current

VBE =0V; VCE =850 V; Tj = 125 °C

[1] --2

mA

VBE =0V; VCE =850 V; Tj =25 °C

[1] --1

mA

ICBO

collector-base cut-off current

VCB = 850 V; IE =0A

[1] --1

mA

ICEO

collector-emitter cut-off current

VCE = 425 V; IB =0A

[1] --0.1

mA

IEBO

emitter-base cut-off current

VEB =7V; IC = 0 A

--10

mA

VCEOsus

collector-emitter sustaining

voltage

IB =0A; IC =10mA; LC =25 mH;

see Figure 6; see Figure 7

400

450

-

V

VCEsat

collector-emitter saturation

voltage

IC =3A; IB =0.6 A; see Figure 8;

see Figure 9

-0.29

1

V

VBEsat

base-emitter saturation voltage

IC =3A; IB =0.6 A; see Figure 10

-

0.99

1.5

V

VF

forward voltage

IF =2A; Tj = 25 °C

-

1.04

1.5

V

hFE

DC current gain

IC =1mA; VCE =5V; Th =25°C;

see Figure 11

10

15

32

IC = 500 mA; VCE =5V; Th =25°C;

see Figure 11

13

21

32

IC =2A; VCE =5 V; Th =25°C;

see Figure 11

11

16

22

IC =3A; VCE =5 V; Th =25°C;

see Figure 11

-

12.5

-

Dynamic characteristics

ton

turn-on time

IC = 2.5 A; IBon =0.5 A; IBoff =-0.5 A;

RL =75 Ω; Tj = 25 °C; resistive load;

see Figure 12; see Figure 13

-

0.52

0.6

µs

ts

storage time

IC = 2.5 A; IBon =0.5 A; IBoff =-0.5 A;

RL =75 Ω; Tj = 25 °C; resistive load;

see Figure 12; see Figure 13

-2.7

3.3

µs

IC =2A; IBon =0.4 A; VBB =-5V;

LB =1µH; Tj = 25 °C; inductive load;

see Figure 14; see Figure 15

-1.2

1.4

µs

IC =2A; IBon =0.4 A; VBB =-5V;

LB =1µH; Tj = 100 °C; inductive load;

see Figure 14; see Figure 15

--1.8

µs

tf

fall time

IC = 2.5 A; IBon =0.5 A; IBoff =-0.5 A;

RL =75 Ω; Tj = 25 °C; resistive load;

see Figure 12; see Figure 13

-

0.3

0.35

µs

IC =2A; IBon =0.4 A; VBB =-5V;

LB =1µH; Tj = 100 °C; inductive load;

see Figure 14; see Figure 15

--0.12

µs

IC =2A; IBon =0.4 A; VBB =-5V;

LB =1µH; Tj = 25 °C; inductive load;

see Figure 14; see Figure 15

-

0.03

0.06

µs

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