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BUJD103AD Fiches technique(PDF) 1 Page - NXP Semiconductors |
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BUJD103AD Fiches technique(HTML) 1 Page - NXP Semiconductors |
1 / 13 page 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package. 1.2 Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode Very low switching and conduction losses 1.3 Applications DC-to-DC converters Electronic lighting ballasts Inverters Motor control systems 1.4 Quick reference data BUJD103AD NPN power transistor with integrated diode Rev. 3 — 3 August 2010 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IC collector current see Figure 1; see Figure 2; DC; see Figure 4 --4 A Ptot total power dissipation see Figure 3; Tmb ≤ 25 °C --80 W VCESM collector-emitter peak voltage VBE = 0 V --700 V Static characteristics hFE DC current gain IC =500 mA; VCE =5 V; see Figure 10; Tj =25°C 13 21 32 VCE =5 V; IC =3A; Tmb = 25 °C; see Figure 10 -12.5 - |
Numéro de pièce similaire - BUJD103AD_15 |
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Description similaire - BUJD103AD_15 |
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