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BUJD103AD Fiches technique(PDF) 6 Page - NXP Semiconductors |
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BUJD103AD Fiches technique(HTML) 6 Page - NXP Semiconductors |
6 / 13 page BUJD103AD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 — 3 August 2010 6 of 13 NXP Semiconductors BUJD103AD NPN power transistor with integrated diode 6. Characteristics [1] Measured with half-sine wave voltage (curve tracer) Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics ICES collector-emitter cut-off current VBE =0V; VCE = 700 V; Tj =125 °C [1] --2 mA VBE =0V; VCE = 700 V; Tj =25°C [1] --1 mA ICBO collector-base cut-off current VCB =700 V; IE =0A [1] --1 mA ICEO collector-emitter cut-off current VCE =400 V; IB =0A [1] --0.1 mA IEBO emitter-base cut-off current VEB =7V; IC = 0 A --10 mA VCEsat collector-emitter saturation voltage IC =3A; IB = 0.6 A; see Figure 7; see Figure 8 -0.29 1 V VBEsat base-emitter saturation voltage IC =3A; IB = 0.6 A; see Figure 9 - 0.99 1.5 V VF forward voltage IF =2A; Tj = 25 °C - 1.04 1.5 V hFE DC current gain IC =1mA; VCE =5V; Tmb =25°C; see Figure 10 10 15 32 IC =500 mA; VCE =5V; Tj =25 °C; see Figure 10 13 21 32 IC =2A; VCE =5V; Tmb =25°C; see Figure 10 11 16 22 IC =3A; VCE =5V; Tmb =25°C; see Figure 10 - 12.5 - Dynamic characteristics ton turn-on time IC =2.5 A; IBon = 0.5 A; IBoff =-0.5A; RL =75 Ω; Tj 25 °C; resistive load; see Figure 11; see Figure 12 - 0.52 0.6 µs ts storage time IC =2.5 A; IBon = 0.5 A; IBoff =-0.5A; RL =75 Ω; Tj = 25 °C; resistive load; see Figure 11; see Figure 12 -2.7 3.3 µs IC =2A; IBon = 0.4 A; VBB =-5V; LB =1 µH; Tj = 25 °C; inductive load; see Figure 13; see Figure 14 -1.2 1.4 µs IC =2A; IBon = 0.4 A; VBB =-5V; LB =1 µH; Tj = 100 °C; inductive load; see Figure 13; see Figure 14 --1.8 µs tf fall time IC =2.5 A; IBon = 0.5 A; IBoff =-0.5A; RL =75 Ω; Tj = 25 °C; resistive load; see Figure 11; see Figure 12 - 0.3 0.35 µs IC =2A; IBon = 0.4 A; VBB =-5V; LB =1 µH; Tj = 100 °C; inductive load; see Figure 13; see Figure 14 --0.12 µs IC =2A; IBon = 0.4 A; VBB =-5V; LB =1 µH; Tj 25 °C; inductive load; see Figure 13; see Figure 14 - 0.03 0.06 µs |
Numéro de pièce similaire - BUJD103AD_15 |
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Description similaire - BUJD103AD_15 |
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