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IRFH6200PBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRFH6200PBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 9 page HEXFET® Power MOSFET Notes through are on page 9 PQFN 5X6 mm Applications • Charge and discharge switch for battery application • Load switch for 12V (typical) bus • Hot-Swap Switch IRFH6200TRPbF 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 Form Quantity PQFN 5mm x 6mm Tape and Reel 4000 IRFH6200TRPbF PQFN 5mm x 6mm Tape and Reel 400 IRFH6200TR2PbF EOL Notice #259 Base Part Number Package Type Standard Pack Orderable part number IRFH6200PbF Note Features Benefits Low RDSon ( ≤ 0.99mΩ) Lower Conduction Losses Low Thermal Resistance to PCB ( ≤ 0.8°C/W) Enable better thermal dissipation Low Profile ( ≤ 0.9 mm) results in Increased Power Density Industry-Standard Pinout ⇒ Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier VDS 20 V RDS(on) max (@VGS = 4.5V) 0.99 (@VGS = 2.5V) 1.50 Qg (typical) 155 nC RG (typical) 1.3 Ω ID (@Tmb = 25°C) 100 h A m Ω Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V ID @ Tmb = 25°C Continuous Drain Current, VGS @ 4.5V ID @ Tmb = 100°C Continuous Drain Current, VGS @ 4.5V IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation g PD @Tmb = 25°C Power Dissipation g Linear Derating Factor g W/°C TJ Operating Junction and TSTG Storage Temperature Range V W A °C Max. 49 100 h 400 ±12 20 40 100 h -55 to + 150 3.6 0.029 156 |
Numéro de pièce similaire - IRFH6200PBF_15 |
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Description similaire - IRFH6200PBF_15 |
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