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BUJ105A Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BUJ105A Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 9 page NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A STATIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES,ICBO Collector cut-off current 1 V BE = 0 V; VCE = VCESMmax - - 0.2 mA I CES V BE = 0 V; VCE = VCESMmax; - - 0.5 mA T j = 125 ˚C I CEO Collector cut-off current V CEO = VCEOMmax (400V) - - 0.1 mA I EBO Emitter cut-off current V EB = 9 V; IC = 0 A - - 1 mA V CEOsust Collector-emitter sustaining voltage I B = 0 A; IC = 10 mA; 400 - - V L = 25 mH V CEsat Collector-emitter saturation voltage I C = 4.0 A;IB = 0.8 A - 0.3 1.0 V V BEsat Base-emitter saturation voltage I C = 4.0 A;IB = 0.8 A - 1.0 1.5 V h FE DC current gain I C = 1 mA; VCE = 5 V 10 14 34 h FE I C = 500 mA; VCE = 5 V 13 23 36 h FEsat I C = 4.0 A; VCE = 5 V 8 11 15 DYNAMIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (resistive load) I Con = 5 A; IBon = -IBoff = 1 A; R L = 75 ohms; VBB2 = 4 V; t on Turn-on time 0.65 1 µs t s Turn-off storage time 1.8 2.5 µs t f Turn-off fall time 0.3 0.5 µs Switching times (inductive load) I Con = 5 A; IBon = 1 A; LB = 1 µH; -V BB = 5 V t s Turn-off storage time 1.2 1.7 µs t f Turn-off fall time 20 50 ns Switching times (inductive load) I Con = 5 A; IBon = 1 A; LB = 1 µH; -V BB = 5 V; Tj = 100 ˚C t s Turn-off storage time 1.4 1.9 µs t f Turn-off fall time 25 100 ns 1 Measured with half sine-wave voltage (curve tracer). February 1999 2 Rev 1.000 |
Numéro de pièce similaire - BUJ105A_15 |
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Description similaire - BUJ105A_15 |
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