Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

BUJ105A Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce BUJ105A
Description  Silicon Diffused Power Transistor
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUJ105A Fiches technique(HTML) 3 Page - NXP Semiconductors

  BUJ105A_15 Datasheet HTML 1Page - NXP Semiconductors BUJ105A_15 Datasheet HTML 2Page - NXP Semiconductors BUJ105A_15 Datasheet HTML 3Page - NXP Semiconductors BUJ105A_15 Datasheet HTML 4Page - NXP Semiconductors BUJ105A_15 Datasheet HTML 5Page - NXP Semiconductors BUJ105A_15 Datasheet HTML 6Page - NXP Semiconductors BUJ105A_15 Datasheet HTML 7Page - NXP Semiconductors BUJ105A_15 Datasheet HTML 8Page - NXP Semiconductors BUJ105A_15 Datasheet HTML 9Page - NXP Semiconductors  
Zoom Inzoom in Zoom Outzoom out
 3 / 9 page
background image
NXP Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ105A
STATIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES,ICBO
Collector cut-off current
1
V
BE = 0 V; VCE = VCESMmax
-
-
0.2
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
0.5
mA
T
j = 125 ˚C
I
CEO
Collector cut-off current
V
CEO = VCEOMmax (400V)
-
-
0.1
mA
I
EBO
Emitter cut-off current
V
EB = 9 V; IC = 0 A
-
-
1
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 10 mA;
400
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 4.0 A;IB = 0.8 A
-
0.3
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 4.0 A;IB = 0.8 A
-
1.0
1.5
V
h
FE
DC current gain
I
C = 1 mA; VCE = 5 V
10
14
34
h
FE
I
C = 500 mA; VCE = 5 V
13
23
36
h
FEsat
I
C = 4.0 A; VCE = 5 V
8
11
15
DYNAMIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con = 5 A; IBon = -IBoff = 1 A;
R
L = 75 ohms; VBB2 = 4 V;
t
on
Turn-on time
0.65
1
µs
t
s
Turn-off storage time
1.8
2.5
µs
t
f
Turn-off fall time
0.3
0.5
µs
Switching times (inductive load)
I
Con = 5 A; IBon = 1 A; LB = 1 µH;
-V
BB = 5 V
t
s
Turn-off storage time
1.2
1.7
µs
t
f
Turn-off fall time
20
50
ns
Switching times (inductive load)
I
Con = 5 A; IBon = 1 A; LB = 1 µH;
-V
BB = 5 V; Tj = 100 ˚C
t
s
Turn-off storage time
1.4
1.9
µs
t
f
Turn-off fall time
25
100
ns
1 Measured with half sine-wave voltage (curve tracer).
February 1999
2
Rev 1.000


Numéro de pièce similaire - BUJ105A_15

FabricantNo de pièceFiches techniqueDescription
logo
NXP Semiconductors
BUJ105AB PHILIPS-BUJ105AB Datasheet
66Kb / 7P
   Silicon Diffused Power Transistor
October 2001 Rev 1.000
logo
WeEn Semiconductors
BUJ105AB WEEN-BUJ105AB Datasheet
460Kb / 9P
   Silicon Diffused Power Transistor
logo
NXP Semiconductors
BUJ105AB PHILIPS-BUJ105AB_15 Datasheet
150Kb / 9P
   Silicon Diffused Power Transistor
October 2001
BUJ105AD NXP-BUJ105AD Datasheet
88Kb / 12P
   Silicon diffused power transistor
Rev. 01-14 December 2004
logo
WeEn Semiconductors
BUJ105AD WEEN-BUJ105AD Datasheet
1Mb / 10P
   Silicon diffused power transistor
More results

Description similaire - BUJ105A_15

FabricantNo de pièceFiches techniqueDescription
logo
Wing Shing Computer Com...
2SD1577 WINGS-2SD1577 Datasheet
138Kb / 1P
   Silicon Diffused Power Transistor
logo
NXP Semiconductors
BU2508DF PHILIPS-BU2508DF Datasheet
71Kb / 7P
   Silicon Diffused Power Transistor
July 1998-Rev 1.600
logo
Wing Shing Computer Com...
S2005A WINGS-S2005A Datasheet
95Kb / 1P
   SILICON DIFFUSED POWER TRANSISTOR
logo
NXP Semiconductors
BU2522DX PHILIPS-BU2522DX Datasheet
80Kb / 7P
   Silicon Diffused Power Transistor
September 1997 Rev 1.200
BU2523DX PHILIPS-BU2523DX Datasheet
69Kb / 7P
   Silicon Diffused Power Transistor
September 1997 Rev 1.200
BU2525AW PHILIPS-BU2525AW Datasheet
74Kb / 7P
   Silicon Diffused Power Transistor
September 1997 Rev 1.100
BU2525DF PHILIPS-BU2525DF Datasheet
71Kb / 7P
   Silicon Diffused Power Transistor
September 1997 Rev 1.200
BU2527AF PHILIPS-BU2527AF Datasheet
70Kb / 7P
   Silicon Diffused Power Transistor
September 1997 Rev 1.200
BU2527DF PHILIPS-BU2527DF Datasheet
81Kb / 7P
   Silicon Diffused Power Transistor
September 1997 Rev 1.200
BU2527DX PHILIPS-BU2527DX Datasheet
83Kb / 7P
   Silicon Diffused Power Transistor
September 1997 Rev 1.200
BU2530AL PHILIPS-BU2530AL Datasheet
65Kb / 6P
   Silicon Diffused Power Transistor
September 1997 Rev 1.200
More results


Html Pages

1 2 3 4 5 6 7 8 9


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com