BUJ103AD_15 datasheet(7/13 Pages) PHILIPS

No de pièce	BUJ103AD

Description	Silicon diffused power transistor

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Fabricant	PHILIPS [NXP Semiconductors]

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BUJ103AD

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Product data sheet

Rev. 2 — 8 November 2011

7 of 13

NXP Semiconductors

BUJ103AD

Silicon diffused power transistor

7.

Package information

Epoxy meets requirements of UL94 V-0 at 1⁄8 inch.

VCEclamp  1000 V; VCC = 150 V; VBB = 5 V; LB =1 H;

LC =200 H.

Tj  Tj(max).

Fig 13. Test circuit for reverse bias safe operating

area

Fig 14. Reverse bias safe operating area

Tmb  25 C; Mounted with heatsink compound and 30  5 Newton force on the center of the envelope.

(1) Ptot maximum and Ptot peak maximum lines.

(2) Second breakdown limits.

(3) I = Region of permissible DC operation.

II = Extension for repetitive pulse operation.

III = Extension during turn-on in single transistor converters provided that RBE  100  and tp  0.6 s.

Fig 15. Forward bias safe operating area

001aab999

DUT

LC

LB

IBon

VBB

VCC

VCL(CE)

probe point

VCEclamp (V)

0

1000

800

400

600

200

001aac000

4

6

2

8

10

IC

(A)

0

001aac001

10−1

10−2

10

1

102

IC

(A)

10−3

VCEclamp (V)

1

103

102

10

(1)

100

μs

200

μs

I(3)

tp = 20 μs

duty cycle = 0.01

50

μs

500

μs

DC

II(3)

III(3)

(2)

ICM(max)

IC(max)

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