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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRFH3702PBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRFH3702PBF Fiches technique(HTML) 1 Page - International Rectifier |
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1 / 10 page  www.irf.com 1 09/21/10 IRFH3702PbF HEXFET® Power MOSFET Notes through are on page 10 Applications Benefits 3mm x 3mm PQFN l Low RDS(ON) l Very Low Gate Charge l Low Junction to PCB Thermal Resistance l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free (Qualified up to 260°C Reflow) l RoHS compliant (Halogen Free) ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. D D D D S G S S VDSS RDS(on) max Qg 30V 7.1mΩ@VGS = 10V 9.6nC l Synchronous Buck Converter for Computer Processor Power l Isolated DC to DC Converters for Network and Telecom l Buck Converters for Set-Top Boxes Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation PD @TA = 70°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case f ––– 6.0 RθJA Junction-to-Ambient gh ––– 45 °C/W RθJA Junction-to-Ambient (t<10s) h ––– 44 -55 to + 150 2.8 0.02 1.8 Max. 16 42 120 ± 20 30 12 25 V W A °C PD - 97368A |
Numéro de pièce similaire - IRFH3702PBF_15 |
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Description similaire - IRFH3702PBF_15 |
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